byx82 / 83 / 84 / 85 / 86 document number 86052 rev. 1.5, 14-apr-05 vishay semiconductors www.vishay.com 1 949539 standard avalanche sinterglass diode features ? glass passivated junction hermetically sealed package low reverse current high surge current loading lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications rectification, general purpose mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byx82 v r = 200 v; i fav = 2 a sod-57 byx83 v r = 400 v; i fav = 2 a sod-57 byx84 v r = 600 v; i fav = 2 a sod-57 byx85 v r = 800 v; i fav = 2 a sod-57 byx86 v r = 1000 v; i fav = 2 a sod-57 parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byx82 v r = v rrm 200 v byx83 v r = v rrm 400 v byx84 v r = v rrm 600 v byx85 v r = v rrm 800 v byx86 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 50 a repetitive peak forward current i frm 10 a average forward current t amb 45 c i fav 2a i 2 *t-rating i 2 *t 8 a 2 *s junction and storage temperature range t j = t stg - 55 to + 175 c e2
www.vishay.com 2 document number 86052 rev. 1.5, 14-apr-05 byx82 / 83 / 84 / 85 / 86 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 1 a v f 0.9 1.0 v reverse current v r = v rrm i r 0.1 1 a v r = v rrm , t j = 100 c i r 10 25 a diode capacitance v r = 4 v, f = 1 mhz c d 20 pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 24 s reverse recovery charge i f = i r = 1 a, di/dt = 5 a/ sq rr 36 c figure 1. max. thermal resistance vs. lead length figure 2. junction temperature vs. reverse/repetitive peak reverse voltage 0 0 20 40 60 80 120 r Ctherm. resist. junction/ ambient ( k/w) thja l C lead length ( mm ) 94 9572 51015 25 30 20 100 ll t l = constant 0 400 800 1200 0 t C junction temperature ( c ) j reverse / repetitive peak reverse voltag e(v) 1600 94 9579 40 80 120 160 240 200 byx 85 byx 86 byx 84 byx 82 byx 83 v r v rrm r thja 35 k/w r thja 57 k/w r thja 100 k/w figure 3. forward current vs. forward voltage figure 4. typ. diode capacitance vs. reverse voltage 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 3.0 94 9573 i C forward current (a ) f v f C forward voltag e(v) scattering limits t j =25c t j = 175c 0 6 12 18 24 30 0.1 1 10 c C diode capacitance ( pf ) d v r C reverse voltag e(v) 100 94 9574 f=1mhz t j =25c
byx82 / 83 / 84 / 85 / 86 document number 86052 rev. 1.5, 14-apr-05 vishay semiconductors www.vishay.com 3 figure 5. thermal response figure 6. thermal response figure 7. thermal response 1 10 100 1000 z Cthermal resistance for pulsecond.(k/w ) thp t p C pulse lengt h(s) 94 9575 10 C3 10 C2 10 C1 10 0 10 1 10 0 10 1 10 2 i frm C repetitive peak forward curren t(a) t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 0.02 0.01 t amb =25c t amb =45 c t amb =70c t amb =100 c single pulse t amb = 125 c t amb = 150 c v rrm 200 v r thja 100 k/w 1 10 100 1000 z C thermal resistance for pulsecond.(k/w ) thp t p C pulse lengt h(s) 94 9578 i frm C repetitive peak forward curren t(a) 10 C3 10 C2 10 C1 10 0 10 1 10 C1 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 0.02 0.01 t amb =25c t amb =45c t amb =60c t amb =100c single pulse v rrm 1000 v t10 r thja 100 k/w t amb =70c s 1 10 100 1000 z C thermal resistance for pulse cond.(k/w ) thp t p C pulse lengt h(s) 94 9577 i frm C repetitive peak forward curren t(a) 10 C4 10 C3 10 C2 10 C1 10 0 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 t amb =25c t amb =45c t amb =70c t amb = 100c single pulse t amb = 125c t amb = 150c v rrm 200 v r thja 57 k/w
www.vishay.com 4 document number 86052 rev. 1.5, 14-apr-05 byx82 / 83 / 84 / 85 / 86 vishay semiconductors package dimensions in mm (inches) figure 8. thermal response 1 10 100 1000 z Cthermal resistance for pulse cond.(k/w ) thp t p C pulse lengt h(s) 94 9576 i frm C repetitive peak forward curren t(a) 10 C4 10 C3 10 C2 10 C1 10 0 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 t amb =25c t amb =45c 70c 100c single pulse t amb = 125c v rrm 1000 v t10 s r thja 57 k/w catho d ei d entification 0.82 (0.032) max. s intere d glass case s od-57 94 9538 26(1.014) min. 26(1.014) min. i s o metho d e 3.6 (0.140)max. 4.0 (0.156) max.
byx82 / 83 / 84 / 85 / 86 document number 86052 rev. 1.5, 14-apr-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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